Raman scattering from InxGa1−xAs/GaAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105181
Reference31 articles.
1. Proton isolated In0.2Ga0.8As/GaAs strained‐layer superlattice avalanche photodiode
2. dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation‐doped field‐effect transistor
3. Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells
4. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
5. Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
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