Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers
Author:
Affiliation:
1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Funder
Yale Institute for Nanoscience and Quantum Engineering
National Science Foundation (NSF)
Toyota Motor Corporation (Toyota)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935418
Reference32 articles.
1. Type-I Diode Lasers for Spectral Region Above 3 μm
2. Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers
3. Interband Cascade Lasers With Low Threshold Powers and High Output Powers
4. Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates
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2. Effect of design and stress relaxation on structural, electronic, and luminescence properties of metamorphic InAs(Sb)/In(Ga,Al)As/GaAs mid-IR emitters with a superlattice waveguide;Journal of Applied Physics;2020-03-31
3. Design and growth of multi-functional InAsP metamorphic buffers for mid-infrared quantum well lasers on InP;Journal of Applied Physics;2019-02-28
4. Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters;Progress in Crystal Growth and Characterization of Materials;2019-02
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