Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3187540
Reference24 articles.
1. Spatial distribution of the luminescence in GaN thin films
2. Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN
3. Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy
4. Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy
5. Effect of reactive ion etching on the yellow luminescence of GaN
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