Affiliation:
1. University of Chinese Academy of Science
2. University of Chinese Academy of Sciences
Abstract
We have observed the transient behavior in the AlGaN photoluminescence. Under an excitation of 325 nm He-Cd laser beam, the blue luminescence (BL) bands and yellow luminescence (YL) bands of AlGaN vary with increasing illumination time. We propose that the chemical reactions between BL-related CNON-Hi (CN-Hi) and YL-related CN-Hi (CN) defect states are the cause of such a phenomenon. The BL transition temperature (Tt) is defined as the temperature at which the intensity of BL bands induced by CNON-Hi is equal to that originated from CN-Hi. Only at Tt, BL shows a peak energy variation due to the exposure. The Tt of AlGaN is higher than what is similarly detected in GaN because of the high reactivity of Al to O.
Funder
Beijing Municipal Science & Technology Commission, Administrative Commission of Zhongguancun Science Park
National Natural Science Foundation of China
Key Research and Development Program of Jiangsu Province
Beijing Nova Program
Strategic Priority Research Program of Chinese Academy of Sciences
Youth Innovation Promotion Association of the Chinese Academy of Sciences
Subject
Atomic and Molecular Physics, and Optics