Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1392959
Reference12 articles.
1. Coulomb Blockade Effects in Edge Quantum Wire SOI MOSFETs
2. Silicon single-electron tunnelling device interfaced with a CMOS inverter
3. A New Design Scheme for Logic Circuits with Single Electron Transistors
4. A memory cell with single-electron and metal-oxide-semiconductor transistor integration
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