Characterization of electronic charged states of high density self-aligned Si-based quantum dots evaluated with AFM/Kelvin probe technique

Abstract

Abstract We have characterized charged states of a self-aligned Si quantum dot (QD) structure with an areal density as high as ∼1013 cm−2 by surface potential measurements by using atomic force microscopy (AFM)/Kelvin probe force microscopy (KFM). By line scanning with the electrically-biased AFM tip with respect to the substrate in a contact mode, the corresponding area was negatively charged caused by electron injection from the tip into QDs. Cross-sectional profiles of the surface potential were clearly changed, which depends on the tip bias voltages. Also, a stepwise shape in a relationship between the change of the surface potential (ΔV) and the tip bias voltages was observed, reflecting electron charging into the discrete energy levels due to the quantum confinement effect. By assuming a simple equivalent circuit model for KFM measurements of the self-aligned Si-QDs, calculated results for ΔV are in good agreement with the measured results. The agreements precisely clarified the charged states in Si-QDs.