Strain relaxation of thin Si0.6Ge0.4 grown with low-temperature buffers by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3091266
Reference40 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
4. Toward Silicon-Based Lasers for Terahertz Sources
5. A Review of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers
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1. Study of strain evolution mechanism in Ge1−xSnx materials grown by low temperature molecular beam epitaxy;Journal of Crystal Growth;2022-01
2. Preparation of low ferromagnetic resonance linewidth yttrium iron garnet films on silicon substrate;Applied Surface Science;2014-07
3. Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate;ECS Transactions;2010-10-01
4. Photoluminescence and Raman study of a tensilely strained Si type-II quantum well on a relaxed SiGe graded buffer;IOP Conference Series: Materials Science and Engineering;2009-11-01
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