Alpha-particle irradiation-induced defects in n-type germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713864
Reference16 articles.
1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
2. Irradiation-induced defects in Ge studied by transient spectroscopies
3. The antimony-vacancy defect in p-type germanium
4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
5. Ion implantation and electron irradiation damage in unstrained germanium and silicon–germanium alloys
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3. Long range annealing of defects in germanium by low energy plasma ions;Physica D: Nonlinear Phenomena;2015-03
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