Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs∕GaAs quantum dots emitting at 1.3μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2713135
Reference12 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Quantum dots for lasers, amplifiers and computing
3. Narrow photoluminescence linewidth (<17 meV) from highly uniform self-assembled InAs/GaAs quantum dots grown by low-pressure metalorganic chemical vapor deposition
4. Improvement of the uniformity of self-assembled InAs quantum dots grown on InGaAs∕GaAs by low-pressure metalorganic chemical vapor deposition
5. Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
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1. Stacking of InAs QDs with Different Spacer Layer Thickness on GaAs Substrate by Molecular Beam Epitaxy;Advanced Science Letters;2018-08-01
2. GaAs integrated quantum photonics: Towards compact and multi-functional quantum photonic integrated circuits;Laser & Photonics Reviews;2016-09-14
3. Excitation transfer in stacked quantum dot chains;Semiconductor Science and Technology;2015-03-31
4. Postgrowth intermixing of strain engineered InAs/GaAs quantum dots;Journal of Alloys and Compounds;2014-12
5. Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators;Nanoscale Research Letters;2013-02-06
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