Excitation transfer in stacked quantum dot chains-Reference-Cited by-同舟云学术

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Excitation transfer in stacked quantum dot chains

Published:2015-03-31 Issue:5 Volume:30 Page:055005
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kanjanachuchai Songphol,Xu Ming,Jaffré Alexandre,Jittrong Apichart,Chokamnuai Thitipong,Panyakeow Somsak,Boutchich Mohamed

Funder

French Ministère des affaires étrangères et européennes (MAEE)

Centre National de la Recherche Scientifique (CNRS)

Thailand Research Fund

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=5/a=055005/pdf

Reference39 articles.

1. Size and shape engineering of vertically stacked self-assembled quantum dots

2. Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots

3. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

4. Optically Driven Spin Memory inn-Doped InAs-GaAs Quantum Dots

5. Multidimensional quantum well laser and temperature dependence of its threshold current

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2. Stray light separation based on the changeable veiling glare index for the vacuum radiance temperature standard facility;Optics Express;2021-04-06

3. GaAsPBi epitaxial layer grown by molecular beam epitaxy;Semiconductor Science and Technology;2020-07-27

4. Correlation between photoluminescence and morphology for single layer self-assembled InGaAs/GaAs quantum dots;Optics Express;2018-08-23

5. Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields;CrystEngComm;2016

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