INFRARED ABSORPTION BANDS IN CARBON‐ AND OXYGEN‐DOPED SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652462
Reference11 articles.
1. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-ACenter
3. Concerning the carbon content in semiconductor silicon
4. The diffusivity of carbon in silicon
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