Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815970
Reference23 articles.
1. Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
2. Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2–Al2O3 gate dielectrics
3. Modeling of low-voltage oxide-based electric-double-layer thin-film transistors fabricated at room temperature
4. Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics
5. Polymer Electrolyte-Gated Organic Field-Effect Transistors: Low-Voltage, High-Current Switches for Organic Electronics and Testbeds for Probing Electrical Transport at High Charge Carrier Density
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1. On the Capacitive-to-Resistive Humidity Response of Polyelectrolyte-Gated Metal Oxide Transistors;Journal of The Electrochemical Society;2024-02-01
2. Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors;ACS Applied Electronic Materials;2022-05-18
3. Strategies to Improve the Synaptic Characteristics of Oxygen-Based Electrochemical Random-Access Memory Based on Material Parameters Optimization;ACS Applied Materials & Interfaces;2022-03-08
4. Solid-State Organic Electrolyte-Gated Transistors Based on Doping-Controlled Polymer Composites with a Confined Two-Dimensional Channel in Dry Conditions;ACS Applied Materials & Interfaces;2020-12-22
5. Humidity Stability of All-Sputtered Metal-Oxide Electric-Double-Layer Transistors;IEEE Transactions on Electron Devices;2020-12
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