Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors-Reference-Cited by-同舟云学术

Sputtered Electrolyte-Gated Transistor with Temperature-Modulated Synaptic Plasticity Behaviors

Published:2022-05-18 Issue:6 Volume:4 Page:2933-2942
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Fu Yang Ming¹^ORCID,Li Hu²,Wei Tianye¹,Huang Long¹,Hidayati Faricha¹,Song Aimin¹²^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, The University of Manchester, Manchester M13 9PL, U.K.

2. Shandong Technology Center of Nanodevices and Integration, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250101, China

Funder

Qilu Young Scholar Program of Shandong University grant

Natural Science Foundation of China grant

Shandong Natural Science Foundation of China grants

Olle Engkvist grant

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00395

Reference64 articles.

1. Endeavor of Iontronics: From Fundamentals to Applications of Ion‐Controlled Electronics

2. A Decade of Iontronic Delivery Devices

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4. Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

5. An Artificial Sensory Neuron with Tactile Perceptual Learning

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