Author:
Yamamoto Y.,Sugiyama T.,Hara A.,Inada T.
Subject
General Physics and Astronomy
Cited by
11 articles.
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1. Application of ion implantation for the modification of silicon-on-sapphire epitaxial systems, their structure, and properties;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2017-07
2. Structurally perfect silicon layers produced on sapphire by oxygen ion implantation;Inorganic Materials;2011-05-25
3. Crystallinity improvement of epitaxial CeO2 films by high-energy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05
4. Rare Earth Thermoelectrics;MRS Proceedings;1997
5. Methods of Forming SOI Wafers;Electrical Characterization of Silicon-on-Insulator Materials and Devices;1995