1. M. Watanabe and A. Tooi, “Formation of SiO2 films by oxygen-ion bombardment,” Jpn. J. Appl. Phys., vol. 5, p. 737, 1966.
2. K. Izumi, M. Doken, and H. Ariyoshi, “CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon,” Electron. Lett., vol. 14, p. 593, 1978.
3. C.G. Tuppen, M.R. Taylor, P.L.F. Hemment, and R.P. Arrowsmith, “The effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation” Thin Solid Films, vol. 131, p. 233, 1985.
4. J. Margail, I. Stoemenos, C. Jaussaud, M. Dupuy, P. Martin, B. Blanchard, and M. Bruel, “Structural characterization of SIMOX structures,” in Energy Beam Solid Interactions and Transient Thermal Processing, V.T. Nguyen and A G Cullis (eds.), Les Editions de Physique, Les Ulis, France, p. 519, 1986.
5. J. Stoemenos, B. Aspar, and J. Margail, “Mechanisms of SIMOX synthesis and related microstructural properties,” in Silicon-On-Insulator Technology and Devices, S. Cristoloveanu (ed.), The Electrochemical Society, Pennington, NJ, p. 16, 1994.