Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots
Author:
Affiliation:
1. Faculty of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5134002
Reference26 articles.
1. Spin relaxation in semiconductor quantum dots
2. Ultralong Dephasing Time in InGaAs Quantum Dots
3. Spin Relaxation Quenching in Semiconductor Quantum Dots
4. Spin relaxation dynamics in highly uniform InAs quantum dots
5. Characteristics of 1.3μm quantum-dot lasers with high-density and high-uniformity quantum dots
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1. Effect of dilute nitride GaNAs quantum well thickness on spin amplification dynamics of tunnel-coupled InAs quantum dots;Applied Physics Letters;2023-12-04
2. Room-temperature electric field control of spin filtering efficiency for enhanced modulation of optical spin polarization in a defect-functional 0D–2D hybrid nanostructure;Nanoscale;2023
3. Highly Efficient Room-Temperature Electron-Photon Spin Conversion Using a Semiconductor Hybrid Nanosystem with Gradual Quantum Dimensionality Reduction;Physical Review Applied;2020-10-08
4. Suppression of thermally excited electron-spin relaxation in InGaAs quantum dots using p-doped capping layers toward enhanced room-temperature spin polarization;Applied Physics Letters;2020-05-04
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