Characteristics of 1.3μm quantum-dot lasers with high-density and high-uniformity quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2372593
Reference14 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
3. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
4. 1.3 μm room-temperature GaAs-based quantum-dot laser
5. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
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