Suppression of thermally excited electron-spin relaxation in InGaAs quantum dots using p-doped capping layers toward enhanced room-temperature spin polarization-Reference-Cited by-同舟云学术

Suppression of thermally excited electron-spin relaxation in InGaAs quantum dots using p-doped capping layers toward enhanced room-temperature spin polarization

Published:2020-05-04 Issue:18 Volume:116 Page:182401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sato Shino¹,Hiura Satoshi¹^ORCID,Takayama Junichi¹^ORCID,Murayama Akihiro¹^ORCID

Affiliation:

1. Faculty of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0004300

Reference30 articles.

1. Electrical spin pumping of quantum dots at room temperature

2. Electrical spin injection into p-doped quantum dots through a tunnel barrier

3. Electrical detection of photoinduced spins both at room temperature and in remanence

4. Angular Dependence of the Spin Photocurrent in a Co−Fe−B/MgO/n−i−p GaAs Quantum-Well Structure

5. Spin relaxation in semiconductor quantum dots

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