Electrical spin injection into p-doped quantum dots through a tunnel barrier-Reference-Cited by-同舟云学术

Electrical spin injection into p-doped quantum dots through a tunnel barrier

Published:2007-02-19 Issue:8 Volume:90 Page:081111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lombez L.,Renucci P.,Braun P. F.,Carrère H.,Marie X.,Amand T.,Urbaszek B.,Gauffier J. L.,Gallo P.,Camps T.,Arnoult A.,Fontaine C.,Deranlot C.,Mattana R.,Jaffrès H.,George J.-M.,Binh P. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2709889

Reference26 articles.

1. Spin transport in GaAs

2. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor

3. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem

4. Conditions for efficient spin injection from a ferromagnetic metal into a semiconductor

5. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier

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