The formation mechanism of globally biaxial strain in He+ implanted silicon-on-insulator wafer based on the plastic deformation and smooth sliding of buried SiO2 film
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China
Funder
111 Projet
Advance Research Foundation of China
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5050829
Reference33 articles.
1. Uniaxially strained silicon by wafer bonding and layer transfer
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1. Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films;Silicon;2024-05-30
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3. Enhanced AC magnetic properties of Fe-based soft magnetic composites coated with an electrically insulated SiO2–ZrO2 layer;Journal of Materials Science: Materials in Electronics;2021-05-10
4. Effects of He+ and H+ Co-Implantation with High Energy on Blisters and Craters of Si and SiO2-On-Si Wafers;Crystals;2019-12-12
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