Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry-Reference-Cited by-同舟云学术

Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry

Published:2002-04 Issue:7 Volume:91 Page:4500-4505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lim Seung-Gu,Kriventsov Stas,Jackson Thomas N.,Haeni J. H.,Schlom D. G.,Balbashov A. M.,Uecker R.,Reiche P.,Freeouf J. L.,Lucovsky G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1456246

Reference17 articles.

1. The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements

2. Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS

3. High-K gate dielectrics

4. Thermodynamic stability of binary oxides in contact with silicon

5. Alternate Gate Oxides for Silicon Mosfets Using High-k Dielectrics

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