Evidence of residual ferroelectric contribution in antiferroelectric lead-zirconate thin films by first-order reversal curves
Author:
Affiliation:
1. GREMAN UMR 7347, Université de Tours, CNRS, INSA-CVL, 16 rue Pierre et Marie Curie, 37071 Tours, France
2. IETR, UMR CNRS 6164, Université de Nantes, 44322 Nantes, France
Funder
Conseil Régional des Pays de la Loire
Conseil Régional du Centre-Val de Loire
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0043293
Reference37 articles.
1. Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
2. Antiferroelectric Ceramics with Field-Enforced Transitions: A New Nonlinear Circuit Element
3. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials
4. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
5. An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed
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