Mechanism and scalability in resistive switching of metal-Pr0.7Ca0.3MnO3 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2349312
Reference19 articles.
1. Morphing Memory
2. Intel International Symposium on Resistive Switch Memory Device Benchmarking;Waser R.,2005
3. Electric-pulse-induced reversible resistance change effect in magnetoresistive films
4. Field-driven hysteretic and reversible resistive switch at the Ag–Pr0.7Ca0.3MnO3 interface
5. Field-induced resistive switching in metal-oxide interfaces
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