Wet oxidation of amorphous Si0.67Ge0.25C0.08 grown on (100) Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367044
Reference20 articles.
1. Modulation doping in GexSi1−x/Si strained layer heterostructures
2. Growth and strain compensation effects in the ternary Si1−x−yGexCyalloy system
3. Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates
4. Precipitation and relaxation in strained Si1−yCy/Si heterostructures
5. Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
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1. High-k gate oxide for silicon heterostructure MOSFET devices;Journal of Materials Science: Materials in Electronics;2006-09
2. Amorphous Ge[sub x]Si[sub 1−x]O[sub y] sputtered thin films for integrated sensor applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
3. Structural characterization of rapid thermally oxidized silicon–germanium–carbon alloy films;Materials Science and Engineering: B;2000-06
4. Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition;Journal of Applied Physics;2000-01
5. Ge:Si:O evaporated alloys as a thermosensitive layer for large area bolometers;Thin Solid Films;1999-01
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