Te-doping of self-catalyzed GaAs nanowires-Reference-Cited by-同舟云学术

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Te-doping of self-catalyzed GaAs nanowires

Published:2015-07-06 Issue:1 Volume:107 Page:012101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suomalainen S.¹,Hakkarainen T. V.¹,Salminen T.¹,Koskinen R.¹,Honkanen M.²,Luna E.³,Guina Mircea¹

Affiliation:

1. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland

2. Department of Material Science, Tampere University of Technology, FI-33101 Tampere, Finland

3. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Funder

Suomen Akatemia (Academy of Finland)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926494

Reference37 articles.

1. Nanowire photonics

2. 25th Anniversary Article: Semiconductor Nanowires - Synthesis, Characterization, and Applications

3. Epitaxial III−V Nanowires on Silicon

4. One-dimensional Steeplechase for Electrons Realized

5. The Morphology of Axial and Branched Nanowire Heterostructures

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2. Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires;Measurement;2023-04

3. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method;Crystals;2022-12-16

4. In situ off-axis electron holography of real-time dopant diffusion in GaAs nanowires;Nanotechnology;2022-08-31

5. A Study on the Effects of Gallium Droplet Consumption and Post Growth Annealing on Te-Doped GaAs Nanowire Properties Grown by Self-Catalyzed Molecular Beam Epitaxy;Catalysts;2022-04-19

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