Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107644
Reference14 articles.
1. CODE: a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dots
2. Two‐dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
3. Narrow two‐dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growth
4. Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth
5. Selective OMVPE of GaInAs and InP using a polycrystalline InP mask
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance;Japanese Journal of Applied Physics;2000-06-01
2. Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
3. Selective Lateral Etching of $\bf Al_{0.3}Ga_{0.7}As/GaAs$ Heterojunction Structure Using the Redox Solution of $\bf I_{2}/KI$;Japanese Journal of Applied Physics;1997-03-01
4. Self-aligned InAlAs/InGaAs heterojunction bipolar transistor with a buried subcollector grown by selective epitaxy;IEEE Electron Device Letters;1994-04
5. Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves;MRS Proceedings;1993-01
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