Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering
Reference10 articles.
1. Selective growth of InGaAs/InP heterojunction bipolar transistors with a buried subcollector
2. Fabrication of lateral planar InP/GaInAsP heterojunction bipolar transistor by selective area epitaxial growth
3. Two‐dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
4. CODE: a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dots
5. Vapor levitation epitaxy: system design and performance
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