CODE: a novel single step MOVPE technique for the fabrication of low-dimensional devices, quantum wires and quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides
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Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantum Dots;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
2. OMCVD growth of InP and InGaAs on InP non-planar substrates patterned with {110} quasi facets;Journal of Crystal Growth;2001-11
3. Crystallographic dependence of OMVPE InGaAs/InP lateral growth on patterned (100) InP substrates prepared by wet etching;Thin Solid Films;2000-12
4. Non-planar crystal growth of Ga0.5In0.5P by metalorganic chemical vapour deposition;Journal of Crystal Growth;1997-02
5. Chemical beam epitaxy on patterned substrates of heterostructures for optoelectronics and nanostructures applications;Journal of Crystal Growth;1996-07
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