Hydrogen desorption kinetics from the Si(1−x)Gex(100)-(2×1) surface
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1645510
Reference52 articles.
1. Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
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3. RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence
4. RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence
5. A surface kinetics model for the growth of Si1−xGexfilms from SiH4/GeH4mixtures
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