Modification of the amphoteric activity of Ge implants in GaAs by dual implantation of Ge and As-Reference-Cited by-同舟云学术

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Modification of the amphoteric activity of Ge implants in GaAs by dual implantation of Ge and As

Published:1980-11 Issue:11 Volume:51 Page:5785-5788
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yeo Y. K.,Pedrotti F. L.,Park Y. S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.327534

Reference10 articles.

1. Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy

2. Germanium‐Doped Gallium Arsenide

3. P‐N Junction Formation during Molecular‐Beam Epitaxy of Ge‐Doped GaAs

4. Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Substitutional site control of Si in GaAs by stoichiometry change with Ga ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

2. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989

3. Evidence of amphoteric behavior of Si in VPE InP;Journal of Crystal Growth;1983-11

4. Doping of III–V compound semiconductors by ion implantation;Nuclear Instruments and Methods in Physics Research;1983-05

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