Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference18 articles.
1. Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium
2. Behavior of Germanium in Gallium Arsenide
3. Germanium-Doped Gallium Arsenide Tunnel Diodes
4. Luminescence due to Ge Acceptors in GaAs
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2. Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects;Applied Physics Letters;2014-02-17
3. Low-energy particle treatment of GaAs surface;Thin Solid Films;2003-06
4. ODMR Investigations of Ge Acceptors in p-Type Al0.4Ga0.6As;Materials Science Forum;1997-12
5. Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3;Materials Science and Engineering: B;1997-01
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