Electronic contribution to the recrystallization growth velocity asymmetry in doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334337
Reference5 articles.
1. A new probe of the density of gap states and dangling bonds in a-Si: crystallization studies
2. Electronic effect on crystallization growth velocities produced by charged dangling bonds ina‐Si
3. Epitaxial regrowth of intrinsic,31P‐doped and compensated (31P+11B‐doped) amorphous Si
4. Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium
5. Role of Electronic Processes in Epitaxial Recrystallization of Amorphous Semiconductors
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1. Solid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Dopant-enhanced solid-phase epitaxy in buried amorphous silicon layers;Physical Review B;2007-07-20
3. Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon;Journal of Applied Physics;2004-08-15
4. Model for Dopant-Induced Enhancement in Solid-Phase Epitaxial Recrystallization of Amorphous Si;Japanese Journal of Applied Physics;1996-12-01
5. Topics in solid phase epitaxy: Strain, structure and geometry;Materials Science and Engineering: R: Reports;1996-01
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