Electronic effect on crystallization growth velocities produced by charged dangling bonds ina‐Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94979
Reference10 articles.
1. A structural model for the interface between amorphous and crystalline Si or Ge
2. Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model
3. Epitaxial regrowth of intrinsic,31P‐doped and compensated (31P+11B‐doped) amorphous Si
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
5. Effects of electrically active impurities on the epitaxial regrowth rate of amorphized silicon and germanium
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