Modeling the effect of hydrogen infiltration on the asymmetry in arsenic-enhanced solid phase epitaxy in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1768616
Reference19 articles.
1. The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon
2. Kinetics of solid phase epitaxy in buried amorphous Si layers formed by MeV ion implantation
3. Diffusion of Hydrogen in Amorphous Silicon in the Low Concentration Regime
4. Kinetics of solid phase crystallization in amorphous silicon
5. Kinetic Competition During Solid Phase Crystallization in Ion–Implanted Silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Solid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Transient crystal grain nucleation in As doped amorphous silicon;Materials Letters;2014-07
3. Hydrogen refinement during solid phase epitaxy of buried amorphous silicon layers;Journal of Applied Physics;2010-08-15
4. Hydrogen in amorphous Si and Ge during solid phase epitaxy;Thin Solid Films;2010-02
5. Dopant enhanced H diffusion in amorphous silicon and its effect on the kinetics of solid phase epitaxy;Materials Science and Engineering: B;2009-02
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