Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2335624
Reference13 articles.
1. Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium
2. Subnanometer Scaling of HfO[sub 2]/Metal Electrode Gate Stacks
3. Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness
4. Border traps: Issues for MOS radiation response and long-term reliability
5. Review on high-k dielectrics reliability issues
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