Effects of post-deposition vacuum annealing on film characteristics of p-type Cu2O and its impact on thin film transistor characteristics
Author:
Affiliation:
1. Electrical Engineering Division, Cambridge University, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
Funder
Engineering and Physical Sciences Research Council (EPSRC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4965848
Reference24 articles.
1. Thin-film transistors based on p-type Cu2O thin films produced at room temperature
2. Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions
3. Single cuprous oxide films synthesized by radical oxidation at low temperature for PV application
4. Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor
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