Engineering the contact resistance of copper/copper oxide via inserting a mediated molybdenum trioxide layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. A review of recent advances in transparent p-type Cu2O-based thin film transistors;Al-Jawhari;Materi Sci Semicond Process,2015
2. Martins et al. R. P-type oxide-based thin film transistors produced at low temperatures. 8263:Mar. 2012;221–235. https://doi.org/10.1117/12.907387,.
3. Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering;Caraveo-Frescas;ACS Nano,2013
4. H. A. Al-Jawhari and J. A. Caraveo-Frescas, “Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature,” Adv. Mater. Res., vol. 856, no. November 2013, pp. 215–219, 2014, doi: 10.4028/www.scientific.net/AMR.856.215.
5. Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer;Li;J Cryst Growth,2009
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