Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366042
Reference15 articles.
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4. Scanning Auger Microscopy Study of Heterogeneous Growth of SiC Film on Si(100) by Reaction with a C2H2Beam
5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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