Gallium arsenide field‐effect transistor by close spaced vapor transport epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98274
Reference6 articles.
1. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors
2. Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
3. PHOTOLUMINESCENCE AND ELECTRICAL PROPERTIES OF EPITAXIAL GaAs GROWN BY CLOSE SPACE VAPOR TRANSPORT
4. Epitaxial GaAs by close space vapor transport
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1. A low temperature photoluminescence study of CSVT grown GaAs epitaxial layers;physica status solidi (c);2003-02
2. Optical Gain Improvement of GaAs Lateral Photoresistive Elements by Sulphur Passivation of the Surface;Heterostructure Epitaxy and Devices — HEAD’97;1998
3. Optimization of the surface morphology of GaAs epitaxial layers grown by close-spaced vapor transport;Canadian Journal of Physics;1993-09-01
4. Doping and residual impurities in GaAs layers grown by close‐spaced vapor transport;Journal of Applied Physics;1993-02
5. Oxygen in gallium arsenide;Journal of Applied Physics;1991-01
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