A low temperature photoluminescence study of CSVT grown GaAs epitaxial layers-Reference-Cited by-同舟云学术

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A low temperature photoluminescence study of CSVT grown GaAs epitaxial layers

Published:2003-02 Issue:3 Volume: Page:902-906
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Somogyi K.,Varga Sz.¹,Rommeluere J.‐F.²

Affiliation:

1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, P.O. Box 49, Hungary

2. Laboratoire de Physique des Solides et Cristallogenèse du CNRS, Bellevue, 1. pl. A. Briand, 92195 Meudon Cedex, France

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306329

Reference19 articles.

1. K.SomogyiandYu. V.Zhilyaev in: Heterostructure Epitaxy and Devices HEAD '97 NATO ARW Science Series 3 High Technology 48 edited by P. Kordos and J. Novák (Kluwer Academic Publ. Dordrecht 1998) p. 103.

2. The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors

3. J. C.BourgoinandH.Samic in: Properties of Gallium Arsenide 3rd ed. EMIS Datareviews Series No.16 edited by M. R. Brozel and G. E. Stillman (INSPEC 1996) pp. 639–642.

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