High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1351535
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1. SrBi2Ta2O9 memory capacitor on Si with a silicon nitride buffer
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