Detection of stacking faults in 6H-SiC by Raman scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1329629
Reference14 articles.
1. Stacking faults in group-IV crystals: Anab initiostudy
2. Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions
3. Computer Simulations of Diffraction Effects due to Stacking Faults in β-SiC: I, Simulation Results
4. Heteroepitaxial growth of β'-SiC films on TiC substrates: Interface structures and defects
5. Phonon Raman scattering in disordered silicon carbides
Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The evolution of H+ implantation induced defects and the different cleavage behaviors under different thermal excitation in 4H-SiC during Crystal-Ion-Slicing technology;Applied Surface Science;2024-04
2. Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation;Advanced Materials Interfaces;2023-06-30
3. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06
4. Optical spectroscopy study of damage in ion-irradiated 3C-SiC epilayers on a silicon substrate;Journal of Applied Physics;2023-05-19
5. SiOC films on C/C composite prepared by chemical vapor deposition with hexamethyldisilazane precursor;Ceramics International;2022-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3