Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces-Reference-Cited by-同舟云学术

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

Published:2017-07-10 Issue:2 Volume:111 Page:021602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Niu Wei¹²^ORCID,Gan Yulin¹,Zhang Yu¹,Valbjørn Christensen Dennis¹,von Soosten Merlin¹^ORCID,Wang Xuefeng²^ORCID,Xu Yongbing²,Zhang Rong²,Pryds Nini¹,Chen Yunzhong¹^ORCID

Affiliation:

1. Department of Energy Conversion and Storage, Technical University of Denmark, Risø Campus, Roskilde 4000, Denmark

2. National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Funder

China Scholarship Council (CSC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4993165

Reference33 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Superconducting Interfaces Between Insulating Oxides

3. Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface