Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO <sub>3</sub> ‐Based Interfaces-Reference-Cited by-同舟云学术

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO ₃ ‐Based Interfaces

Published:2022-11-24 Issue: Volume: Page:2200377
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Shashank Utkarsh¹^ORCID,Deka Angshuman¹²,Ye Chen³,Gupta Surbhi⁴,Medwal Rohit⁵,Rawat Rajdeep Singh⁴,Asada Hironori⁶,Renshaw Wang X.³⁷,Fukuma Yasuhiro¹⁸

Affiliation:

1. Department of Physics and Information Technology Faculty of Computer Science and System Engineering Kyushu Institute of Technology 680-4 Kawazu Iizuka 820-8502 Japan

2. Birck Nanotechnology Center School of Electrical and Computer Engineering Purdue University West Lafayette IN 47907 USA

3. School of Physical and Mathematical Sciences Nanyang Technological University 637616 Singapore

4. Natural Sciences and Science Education National Institute of Education Nanyang Technological University 637616 Singapore

5. Department of Physics Indian Institute of Technology Kanpur Kanpur 208016 India

6. Graduate School of Sciences and Technology for Innovation Yamaguchi University 2-16-1 Tokiwadai Ube 755-8611 Japan

7. School of Electrical and Electronic Engineering Nanyang Technological University 639798 Singapore

8. Research Center for Neuromorphic AI hardware Kyushu Institute of Technology Kitakyushu 808-0196 Japan

Funder

Japan Society for the Promotion of Science

Iketani Science and Technology Foundation

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200377

Reference38 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Erasable and recreatable two-dimensional electron gas at the heterointerface of SrTiO 3 and a water-dissolvable overlayer

3. Emergent phenomena at oxide interfaces

4. Extreme mobility enhancement of two-dimensional electron gases at oxide interfaces by charge-transfer-induced modulation doping

5. Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

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