High-resolution characterization of defects in oxide thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2982082
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1. Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal–oxide–semiconductor technology using scanning spreading resistance microscopy
2. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
3. Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes
4. Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures
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