Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures-Reference-Cited by-同舟云学术

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Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures

Published:2006 Issue:1 Volume:24 Page:404
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Park S.-E.,Nguyen N. V.,Kopanski J. J.,Suehle J. S.,Vogel E. M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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