Accelerated domain switching speed in single-crystal LiNbO3 thin films-Reference-Cited by-同舟云学术

Accelerated domain switching speed in single-crystal LiNbO3 thin films

Published:2015-03-14 Issue:10 Volume:117 Page:104101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jiang J.¹²,Meng X. J.¹,Geng D. Q.³,Jiang A. Q.¹²

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China

2. State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China

3. Nanoln Electronics Co., Ltd., 750 Shunhua Road, Jinan High-Tech Zone, Jinan 250101, China

Funder

National Key Basic Research Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914483

Reference30 articles.

1. Ferroelectric Memories

2. Ferroelectric Thin Films of Bismuth-Containing Layered Perovskites: Part I, Bi4Ti3O12

3. Piezoresponse Force Microscopy Studies of Switching Behavior of Ferroelectric Capacitors on a 100-ns Time Scale

4. Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

5. Ferroelectric Domain Breakdown

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