The technique to symmetrize domain switching hysteresis loops in LiNbO3 domain-wall nanodevices with improved polarization retention

Abstract

Ferroelectric devices have wide applications in nonvolatile random-access memories, sensors, actuators, and transducers. The built-in potential at the interfaces could result in poor polarization retention. Here, we found an effective way to independently adjust two coercive fields of LiNbO3 mesa-like domain wall devices in contact to two side electrodes at the surface. Taking advantage of the electrode shielding effect on the depolarization field across an interfacial layer, the near-zero coercive field increases almost linearly with respect to the extending length of one side electrode covering the tail of the reversed domain, enabling nonvolatile ferroelectric domain wall devices in good polarization retention and fast operation speeds.