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Polarization relaxation kinetics in ultrathin ferroelectric capacitors

Published:2013-03-04 Issue:9 Volume:102 Page:092901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Stamm A.,Kim D. J.,Lu H.,Bark C. W.,Eom C. B.,Gruverman A.

Funder

U.S. Department of Energy

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794865

Reference28 articles.

1. Tunneling Across a Ferroelectric

2. Domain Wall Creep in Epitaxial FerroelectricPb(Zr0.2Ti0.8)O3Thin Films

3. Investigation on switching kinetics in epitaxial Pb(Zr0.2Ti0.8)O3 ferroelectric thin films: Role of the 90° domain walls

4. Tunneling electroresistance in ferroelectric tunnel junctions with a composite barrier

5. Critical thickness for ferroelectricity in perovskite ultrathin films

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4. Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges;Proceedings of the IEEE;2023-02

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