The role of strain in hydrogenation induced cracking in Si∕Si1−xGex∕Si structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2963489
Reference11 articles.
1. Application of hydrogen ion beams to Silicon On Insulator material technology
2. Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation
3. Hydrogen blistering of silicon: Progress in fundamental understanding
4. Effect of substrate growth temperatures on H diffusion in hydrogenated Si∕Si homoepitaxial structures grown by molecular beam epitaxy
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